Matching Network for GaN HEMT Power Amplifier
Meteksan Defence is the one of the leading defense companies in Turkey. It has prioritized university-industry cooperation, especially with Bilkent University, and aims to become a long-term advanced technology products solution partner of the Turkish Armed Forces. Meteksan Defence’s mission is to develop the most creative and innovative solutions for customers in the fields of advanced design and production technologies, while taking advantage of academic infrastructure and making the company’s resources available for Bilkent University.
The challenge was to design a power amplifier (PA) matching network for the unmatched Cree gallium nitride (GaN) high electron mobility transistor (HEMT) CGH40025F. The design goals for the PA were to 1) create an amplifier circuit that provides 25 W output power from 1.9 - 2.1 GHz for 28 V operation, 2) reach high power-added efficiency (PAE), and 3) suppress harmonics as much as possible.
Using the load-pull template in the software, the designers obtained the load-pull contours for the transistor. At the beginning of the design, it was beneficial to use the harmonic balance engine to obtain the output power and PAE information for the transistor impedance at the load port.
Next, the designers explored the stability factor of the amplifier circuit. The final results were 25 W of output power with 50 percent PAE and 35 dB of harmonic compression. Measurement results showed the amplifier circuit provided good correlation with NI AWR software.
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