A GaN on SiC 0.25 μm Process for PA, LNA, and Switch Design
Presented by: Eric Leclerc, United Monolithic Semiconductors (UMS)
Hosted by: National Instruments
Registration: Register Here
GaN on silicon carbide (SiC) offers high performance and in particular high power density for end-market applications in telecommunications and aerospace/defense. To this end, the 4-inch GH25 UMS foundry process enables the design of drivers and high-power amplifiers up to 20 GHz for systems requiring high power-added efficiency (PAE) for lower energy consumption and operating costs as well as linearity for communication networks where signal quality is critical.
The UMS GaN process design kits (PDKs) for Microwave Office software provides designers with a comprehensive library of on-chip components that include layout details, electrical models, switch and diode models as well as stack definition for 3D view generation and EM simulation of passive components.
Eric Leclerc joined UMS at its creation in 1996 to work on new power device development, characterization and modeling. He is presently the field marketing manager within the UMS Marketing and Sales organization. Prior to his current role, Mr. Leclerc was the UMS foundry manager for several years. Born in France, Eric obtained a research degree in Physics in 1984 and received a Solid State Physics DEA in 1985 at Paris XI University (Orsay). Learn more about UMS at: https://www.ums-gaas.com/