Application Note

A Simulation-Based Flow for Broadband GaN Power Amplifier Design

NI AWR Design Environment™ is featured in this application note demonstrating a simulation-based methodology for broadband power amplifier (PA) design using load-line, load-pull, and real-frequency synthesis techniques. The design highlighted in this application note is a Class F amplifier created using the Qorvo 30 W gallium nitride (GaN) high electron mobility transistor (HEMT) T2G6003028-FL. Goals for this design included a minimum output power of 25 W, bandwidth of 1.8 - 2.2GHz, and maximum power-added efficiency (PAE). The design procedure was performed using the Modelithics GaN HEMT nonlinear model for the Qorvo transistor in conjunction with NI AWR Design Environment, inclusive of Microwave Office circuit design software, Modelithics Microwave Global Models, and the AMPSA Amplifier Design Wizard (ADW).